SST29LE010
2008-08-02
The SST29LE010 is a 128K x8 CMOS Page-Write EEPROM manufactured with SST’s proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST29LE010 writes with a single power supply. Internal Erase/Program is transparent to the user. The SST29LE010 conforms to JEDEC standard pinouts for byte-wide memories. Featuring high performance Page-Write, the SST29LE010 provides a typical Byte-Write time of 39 ?；；；sec. The entire memory, i.e., 128 KByte, can be written page-by-page in as little as 5 seconds, when using interface features such as Toggle Bit or Data# Polling to indicate the completion of a Write cycle. To protect against inadvertent write, the SST29LE010 has on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, the SST29LE010 is offered with a guaranteed Page-Write endurance of 10,000 cycles. Data retention is rated at greater than 100 years. The SST29LE010 is suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, the SST29LE010 significantly improves performance and reliability, while lowering power consumption. The SST29LE010 improves flexibility while lowering the cost for program, data, and configuration storage applications. To meet high density, surface mount requirements, the SST29LE010 is offered in a 32-lead PLCC and 32-lead TSOP packages. See Figures 1 and 2 for pin assignments.
